首页> 外国专利> PROCESS FOR THE CRYSTALLINE GROWTH OF A THIN LAYER OF MULTI-ELEMENT OXIDE CONTAINING BISMUTH AS A CONSTITUENT ELEMENT

PROCESS FOR THE CRYSTALLINE GROWTH OF A THIN LAYER OF MULTI-ELEMENT OXIDE CONTAINING BISMUTH AS A CONSTITUENT ELEMENT

机译:含铋的多元素氧化物薄层晶体组成的晶体生长过程

摘要

The invention relates to a method for the crystalline growth of a thin layer of multiple element oxide containing bismuth as a constituent element, which consists in adjusting the growth environment so that it enters conditions (401) such that there is no formation of bismuth oxide alone but that there is formation of the desired multiple element oxide; and bringing excess bismuth relative to the other elements to the growth environment, to prevent defect in bismuth and to evaporate from the thin layer of excess bismuth.
机译:本发明涉及一种以铋为构成元素的多元素氧化物薄层结晶生长的方法,该方法包括调节生长环境,使其进入条件(401),使得不单独形成氧化铋。但是形成了所需的多元素氧化物;相对于其他元素,将过量的铋带入生长环境,以防止铋的缺陷并从过量的铋薄层中蒸发掉。

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