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PROCESS FOR THE CRYSTALLINE GROWTH OF A THIN LAYER OF MULTI-ELEMENT OXIDE CONTAINING BISMUTH AS A CONSTITUENT ELEMENT
PROCESS FOR THE CRYSTALLINE GROWTH OF A THIN LAYER OF MULTI-ELEMENT OXIDE CONTAINING BISMUTH AS A CONSTITUENT ELEMENT
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机译:含铋的多元素氧化物薄层晶体组成的晶体生长过程
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摘要
The invention relates to a method for the crystalline growth of a thin layer of multiple element oxide containing bismuth as a constituent element, which consists in adjusting the growth environment so that it enters conditions (401) such that there is no formation of bismuth oxide alone but that there is formation of the desired multiple element oxide; and bringing excess bismuth relative to the other elements to the growth environment, to prevent defect in bismuth and to evaporate from the thin layer of excess bismuth.
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