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Efficient cache replacement policy for minimising error rate in L2-STT-MRAM caches

机译:高效的缓存替换策略,可最大程度地减少L2-STT-MRAM缓存中的错误率

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The current research statistics for cache designing reveals that Spin Torque Transfer Magnetic RAMs (STT-MRAMs) have become one of the most promising technologies in the field of memory chip design, gaining a lot of attention from researchers due to its dynamic direct map and data access policies for reducing the average cost i.e. both time and energy optimisation. In this paper, the vulnerability of STT-MRAM caches has been investigated to examine the effect of workloads as well as process variations for characterising the reliability of STT-MRAM cache. The current study is intended to analyse and evaluate an existing efficient cache replacement policy namely Least Error Rate (LER) which utilises Hamming Distance (HD) computations to reduce the Write Error Rate (WER) of L2-STT-MRAM caches with acceptable overheads. The performance analysis of the algorithm ensures its effectiveness in reducing the WER and cost overheads as compared to the conventional LRU techniques.
机译:当前有关高速缓存设计的研究统计数据表明,自旋扭矩传递磁性RAM(STT-MRAM)已成为存储芯片设计领域中最有前途的技术之一,由于其动态直接映射和数据而引起了研究人员的广泛关注。降低平均成本(即时间和能源优化)的访问策略。在本文中,已经对STT-MRAM缓存的漏洞进行了研究,以检查工作负载的影响以及表征STT-MRAM缓存可靠性的过程变化。当前的研究旨在分析和评估现有的有效高速缓存替换策略,即最小错误率(LER),该策略利用汉明距离(HD)计算以可接受的开销减少L2-STT-MRAM高速缓存的写错误率(WER)。与常规LRU技术相比,该算法的性能分析可确保其在降低WER和降低成本开销方面的有效性。

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