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首页> 外文期刊>International Journal of Fracture >Energy considerations in crack deflection phenomenon in single crystal silicon
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Energy considerations in crack deflection phenomenon in single crystal silicon

机译:单晶硅中裂纹挠曲现象的能量考虑

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Crack deflection in single-crystal brittle occurs when a crack, propagating on one cleavage plane, ‘chooses’, from energy considerations, to continue propagating on another cleavage plane. This phenomenon was identified during dynamic crack propagation experiments of thin, rectangular [0 0 1] single-crystal (SC) silicon specimens subjected to three-point bending (3PB). Specimens with long pre-cracks (hence propagating at a ‘low’ energy and velocity) cleave along the vertical (1 1 0) plane, while the same specimens but with short pre-cracks (and therefore with higher propagation energy and velocity) cleave along the inclined (1 1 1) plane. The same specimens with intermediate pre-crack length show that the crack first propagates on the (1 1 0) plane and then deflects to the (1 1 1) plane. We show that the deflection is due to variations of the material property that resists cracking, Γ, the dynamic cleavage energy, with velocity and crystallographic orientation. We propose selection criteria to explain the deflection: The crack will deflect to the plane with the lowest dynamic cleavage energy. We further suggest that crack deflection is the basic mechanism controlling the way the crack consumes energy while propagating and is the main cause of surface perturbations. The spatial temporal fracture energy along the (1 1 0) cleavage plane is evaluated.
机译:当在一个分裂平面上传播的裂纹从能量的考虑“选择”以继续在另一个分裂平面上传播时,就会发生单晶脆性裂纹的挠曲。在经过矩形薄[0 0 1]矩形单晶硅(SC)的三点弯曲(3PB)的动态裂纹扩展实验中,发现了这种现象。预裂纹较长的标本(因此以较低的能量和速度传播)沿垂直(1 1 0)平面分裂,而相同的标本但预裂纹较短的标本(因此具有较高的传播能量和速度)分裂。沿着倾斜的(1 1 1)平面。具有中间裂纹前长度的相同样本表明,裂纹首先在(1 1 0)平面上传播,然后偏转到(1 1 1)平面。我们表明,挠度是由于材料的抗裂性(Γ),动态裂解能,速度和晶体学取向的变化引起的。我们提出选择标准来解释挠度:裂纹将偏向具有最小动态分裂能的平面。我们进一步建议,裂纹挠度是控制裂纹在传播时消耗能量的基本机制,并且是表面扰动的主要原因。评估沿(1 1 0)劈裂面的时空断裂能。

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