Non-local impact ionisation coefficients of submicron In_(0.52)Al_(0.48)As avalanche photodiodes

摘要

In this article, the field dependence of electron and hole impact ionisation coefficients and threshold energies in submicron In_(0.52)Al_(0.48)As p~+-i-n~+ and n~+-i-p~+ avalanche photodiodes with intrinsic region thicknesses down to 50 nm have been determined from photomultiplication, initiated by both pure electron and pure hole injections. A non-local analysis is used to take the effects of carrier's dead space and its previous ionisation history as well as the random nature of impact ionisation into account. Our calculated ionisation characteristics are in excellent agreements with those obtained based on experiments reported recently by others.