Device analysis and computer modelling of a-Si:H solar cell

摘要

A computer simulation of a-Si:H solar cell is presented in the analysis of its optical and electrical properties. The p-i-n single junction a-SiC:H/a-Si:H/a-Si:H solar cell, is investigated by applying to the simulator program. The relation between the photon energy with the optical parameters is included; thickness of P layer and its impact on solar cell efficiency is manipulated using PC1D. Illuminated Ⅰ-Ⅴ or EQE curves of the cell are calculated using the spectral generation profile in TCAD sentaurus. Such a study leads to the identification of optimum process conditions for the preparation of thin film.