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Density functional theory study of the effect of Vanadium doping on electronic and optical properties of NiO

机译:钒掺杂对NiO电子和光学性能影响的密度泛函理论研究

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The effect of Vanadium (V) doping on electronic and optical properties of NiO is discussed. Electronic and optical properties of a 32-atom supercell of V_xNi_(1-x)O (x = 0.0625) obtained from first-principles calculations, performed within density functional theory (DFT), using the generalized gradient approximation (GGA) with the Hubbard potential U were studied and compared to those of a 32-atom supercell of pure NiO. From the electronic structure and complex dielectric function analysis, the V doping causes the reduction of the bandgap by inducing the localized V t_(2g) state in the NiO bandgap region, and the first optical transition for V-doped NiO occurs at a lower frequency than the one for the intrinsic NiO. The bandgap shrinkage to about 2 eV makes NiO when doped with V a potential candidate for visible light range application in photocatalytic applications. The resulting effects on refractive index, reflectivity, absorption, optical conductivity and loss function for V-doped NiO are compared to those of pristine NiO.
机译:讨论了钒掺杂对NiO的电子和光学性能的影响。通过使用Hubbard的广义梯度近似(GGA)在密度泛函理论(DFT)中从第一原理计算获得的V_xNi_(1-x)O(x = 0.0625)的32原子超级电池的电子和光学性质研究了潜在的U,并将其与纯NiO的32原子超级电池的U进行了比较。从电子结构和复杂的介电函数分析,V掺杂通过在NiO带隙区域中诱导局部V t_(2g)状态引起带隙减小,并且V掺杂NiO的第一次光学跃迁在较低频率下发生而不是本征NiO。带隙收缩至约2 eV,使掺有V的NiO成为光催化应用中可见光范围应用的潜在候选者。比较了对原始掺杂的NiO的折射率,反射率,吸收率,光导率和损耗函数的影响。

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