DIFFUSION MASS TRANSPORT IN LIQUID PHASE EPITAXIAL GROWTH OF SEMICONDUCTORS

摘要

A numerical simulation model for the mass transport occurring during the liquid phase epitaxial growth of AlGaAs is presented. The mass transport equations in the liquid and solid phases, and the relationships between concentrations and temperature obtained from the phase diagram constitute the governing equations. These equations together with appropriate interface and boundary conditions were solved numerically by the Finite Element Method. Numerical results show the importance of diffusion into the solid phase, affecting the composition of grown layers. Simulation results agree with experiments. Copyright (C) 1996 Elsevier Science Ltd [References: 10]