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Exploiting the Logic-In-Memory paradigm for speeding-up data-intensive algorithms

机译:利用用于加速数据密集型算法的逻辑内存范式

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摘要

In the last decades transistor scaling has driven electronics toward an extraordinary evolution. The ability to squeeze millions of transistors on a single chip makes it possible to have an incredible computational power in very small size. Many computational systems are still based on the Von Neumann architecture, where computational units and memory blocks are two separate entities. Nanometer-sized transistors enable the development of incredibly fast logic units that cannot work at full speed due to limitations in data transfer from memory. To further evolve electronic circuits, new innovative architectural solutions must be developed to overcome the main limitations of current systems. In this work, we present an architectural implementation of the Logic-In-Memory (LIM) concept that we characterize by considering three data-intensive benchmarks: the odd even sort, the integral image and the binomial filter. The architecture is synthesized on a 28 nm CMOS technology and it is validated by comparing it to a previous version of the LIM structure and to conventional architectures, showing an impressive increase in performance, in terms of speed gain and power consumption reduction.
机译:在过去的几十年中,晶体管缩放使电子产品具有非凡的进化。在单个芯片上挤出数百万晶体管的能力使得可以在非常小的尺寸下具有令人难以置信的计算能力。许多计算系统仍然基于Von Neumann架构,其中计算单元和存储器块是两个单独的实体。纳米尺寸的晶体管使得能够开发令人难以置信的快速逻辑单元,由于数据传输的限制,不能全速工作。为了进一步发展电子电路,必须开发出新的创新架构解决方案来克服当前系统的主要局限性。在这项工作中,我们提出了一种逻辑内存(LIM)概念的架构实现,我们通过考虑三个数据密集型基准来表征:奇数甚至排序,积分图像和二项式过滤器。在28 nm CMOS技术上合成架构,通过将其与先前版本的LIM结构和传统架构进行验证,在速度增益和功耗降低方面验证了令人印象深刻的性能。

著录项

  • 来源
    《Integration》 |2019年第5期|153-163|共11页
  • 作者单位

    Politecn Torino Dipartimento Elettron & Telecomunicaz Corso Castelfidardo 39 I-10129 Turin Italy;

    Politecn Torino Dipartimento Elettron & Telecomunicaz Corso Castelfidardo 39 I-10129 Turin Italy;

    Politecn Torino Dipartimento Elettron & Telecomunicaz Corso Castelfidardo 39 I-10129 Turin Italy;

    Politecn Torino Dipartimento Elettron & Telecomunicaz Corso Castelfidardo 39 I-10129 Turin Italy;

    Politecn Torino Dipartimento Elettron & Telecomunicaz Corso Castelfidardo 39 I-10129 Turin Italy;

    Politecn Torino Dipartimento Elettron & Telecomunicaz Corso Castelfidardo 39 I-10129 Turin Italy;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    Logic-in-Memory; Smart memory; Parallel architectures; Data-intensive algorithms; Non-Von Neumann architectures;

    机译:逻辑内存;智能内存;并行架构;数据密集型算法;非von neumann架构;

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