Proximity Correction Methodology Uses Depict and Terrain for State-of-the-Art Photolithography and Topography Simulation

摘要

The photolithography engineer has to optimize many factors to target and control the process. The rapidly increasing cost of experiments, along with limitations of time and equipment access, support simulation as a valuable approach. Traditional simulation techniques are no longer adequate in the era of deep-submicron technology. Optical proximity correction (OPC) and full 3D simulation with calibration procedures are required.