Comments on 'Sinlultaneous determination of transistor noise, gain, and scattering parameters for amplifier design through noise figure measurements only'

Pospieszalski Marian W.

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Comments on 'Sinlultaneous determination of transistor noise, gain, and scattering parameters for amplifier design through noise figure measurements only'

机译：关于“仅通过噪声系数测量来同时确定放大器设计的晶体管噪声，增益和散射参数的评论”

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《Instrumentation and Measurement, IEEE Transactions on》 |1986年第2期|228-228|共1页
作者
Pospieszalski Marian W.;
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作者单位

Dipartimento di Ingegneria Elettrica, Viale delle Scienze, 90128 Palermo-Italy;

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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);
原文格式 PDF
正文语种 eng
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专利

1. The determination of the noise, gain and scattering parameters of microwave transistors (HEMT's) using only automatic noise figure test-set [J] . Martines G., Sannino M. IEEE Transactions on Microwave Theory and Techniques . 1994,第7期

机译：仅使用自动噪声系数测试仪确定微波晶体管（HEMT）的噪声，增益和散射参数
2. Ultralow-Noise Figure and High Gain Ku-Band Bulk CMOS Low-Noise Amplifier With Large-Size Transistor [J] . Han-Woong Choi, Sunkyu Choi, Choul-Young Kim Microwave and Wireless Components Letters, IEEE . 2021,第1期

机译：具有大尺寸晶体管的超低噪声系数和高增益KU频段CMOS低噪声放大器
3. Direct extraction of all four transistor noise parameters from 50 /spl Omega/ noise figure measurements [J] . Lazaro A., Pradell L. Electronics Letters . 1998,第3期

机译：从50 / spl Omega /噪声系数测量值中直接提取所有四个晶体管噪声参数
4. Determination of FET noise parameters from 50 Ω noise figure measurements using a distributed noise model [C] . M.C. Maya, A. Lazaro, L. Pradell European Gallium Arsenide and Other Semiconductors Application Symposium . 2002

机译：使用分布式噪声模型测定50Ω噪声系数测量的FET噪声参数
5. Field effect transistor noise model analysis and low noise amplifier design for wireless data communications. [D] . Yoo, Seungyup. 2000

机译：用于无线数据通信的场效应晶体管噪声模型分析和低噪声放大器设计。
6. Quantum information tapping using a fiber optical parametric amplifier with noise figure improved by correlated inputs [O] . Xueshi Guo, Xiaoying Li, Nannan Liu, -1

机译：使用光纤参量放大器进行量子信息窃听通过相关输入改善噪声系数
7. Determination of FET noise parameters from 50 Ω noise figure measurements using a distributed noise model [O] . Maya M.C., Lazaro A., Pradell L. 2002

机译：使用分布式噪声模型从50Ω噪声系数测量中确定FET噪声参数
8. Noise and Gain Measurements of Low Noise Amplifiers . Rausch- und Verstaerkungsmessung an Rauscharmen Vorverstaerkern [R] . Heun, H. J., Raubal, H. 1971

机译：低噪声放大器的噪声和增益测量。 Rausch- und Verstaerkungsmessung是Rauscharmen Vorverstaerkern

Comments on 'Sinlultaneous determination of transistor noise, gain, and scattering parameters for amplifier design through noise figure measurements only'

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