Photometric Method of Study of Semiconductor Heterostructures

摘要

The problems of diagnostics of the parameters of light-emitting diodes are considered. The method of study described is applicable for the study of degradation phenomena in any emitting structures and devices based on them, as well as in classical emitters, lamps (incandescent, luminescent, metal-halogen, and others). The method of study of degradation phenomena in semiconductor emitting heterostructures is based on measurements of the spatial distribution of luminous intensity by the goniophotometric method. By example of the technology of thermal ultrasound welding of contact conductors, the physical mechanisms affecting the degradation of characteristics of emitting dies and light diodes based on them are described. The ways of increasing the reliability and useful life of light-emitting diodes are demonstrated.