Study on the effects of well number on temperature characteristics in 1.3-μm InGaAsP-InP quantum-well lasers

摘要

Effects of well number on temperature characteristics in 1.3-μm InGaAsP-InP multi-quantum-well lasers have been investigated. A smaller well number is suitable for lower threshold current and higher differential quantum efficiency at 25℃, while larger well number produces better performances at 85℃. Furthermore, lasers with a larger well number can achieve a less output power penalty at high temperature. For the first time, a theoretical model has been established to precisely explain the relationship between the characteristic temperature of threshold current and that of external differential efficiency.