Si doped GaAs/AlGaAs terahertz detector and phonon effect on the responsivity

摘要

Terahertz detection capability of an n-type heterojunction interfacial work function internal photoemission (HEIWIP) detector is demonstrated. Threshold frequency, f_0, of 3.2 THz (93 μm) was obtained by using n-type GaAs emitter doped to 1 x 10~(18) cm~(-3) and Al_(0.04)Ga_(0.96)As single barrier structure. The detector shows a broad spectral response from 30 to 3.2 THz (10-93 μm) with peak responsivity of 6.5 A/W at 7.1 THz under a forward bias field of 0.7 kV/cm at 6 K. The peak quantum efficiency and peak detectivity are ～19% and ～5.5 x 10~8 Jones, respectively under a bias field of 0.7 kV/cm at 6 K. In addition, the detector can be operated up to 25 K.