Xenon Discharge-Produced Plasma Radiation Source for EUV Lithography

摘要

Extreme ultraviolet (EUV) radiation with wavelengths of 11–14 nm is seen as the most promising candidate for a new lithographic technology. Compared with synchrotron radiation sources and laser-produced plasmas, gas discharge-produced plasma sources for EUV radiation are expected to offer lower cost of ownership. Using xenon, a broadband emission in the investigated wavelength range from 10 to 17 nm is observed. Very short current pulses, having a fast rise time of 85- or 140-ns duration and 23-kA amplitude, were applied across the xenon-filled $Z$-pinch capillary (3-mm diameter and 5-mm length) to produce EUV radiation. An EUV radiation from the $Z$-pinch plasma was characterized, which is based on the temporal behavior of EUV intensity and the pinhole images. Two maximum EUV radiations occur, which are sensitive to the xenon flow rate and the discharge current. The first radiation is relatively of short duration, while the second radiation lasts as long as the first period of the current flows. The EUV source size due to the first radiation is approximately 300 $muhbox{m}$ , i.e., half of the one due to the second radiation.