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Influence of impurities and intrinsic defects on physicomechanical properties of silicon carbide single crystals

机译:杂质和固有缺陷对碳化硅单晶物理力学性能的影响

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Microindentation with a Vickers diamond pyramid was used in a study of mechanical properties of 6H-SiC with different concentrations of impurities (nitrogen and aluminium) and of intrinsic defects generated by irradiation or during growth under nonstoichiometric conditions. It was found that SiC crystals containing nonstoichiometric and radiation defects, as well as samples with high nitrogen concentration (Cn=10~20 cm~3), have a greater tendency for cracking, which results in deterioration of the microstrength characteristics.
机译:用维氏钻石金字塔进行微压痕用于研究具有不同浓度的杂质(氮和铝)的6H-SiC的机械性能以及在辐照或在非化学计量条件下的生长过程中产生的固有缺陷。发现含有非化学计量和辐射缺陷的SiC晶体,以及高氮浓度(Cn = 10〜20 cm〜3)的样品,都有更大的开裂倾向,这导致微强度特性的恶化。

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