CRYSTAL DEFECT INSPECTION METHOD AND CRYSTAL DEFECT INSPECTION APPARATUS OF SILICON CARBIDE SINGLE CRYSTAL

摘要

PROBLEM TO BE SOLVED: To provide a crystal defect inspection method and a crystal defect inspection apparatus capable of performing inspection quickly and inexpensively when inspecting the in-plane distribution of dislocation and lamination defects existing in the epitaxial film of a silicon carbide single-crystal wafer for manufacturing a semiconductor element by an electroluminescence method.;SOLUTION: Voltage is applied at an area to the back of a wafer, where the wafer is grounded by pushing out a liquid metal onto the epitaxial film at a measurement position from the tip of a tubular member, or bringing a conductive film electrode that is made to contact and separate from the wafer into contact. Then, the two-dimensional information of EL light from each position corresponding to an array at a collective measurement region in a wafer surface is acquired collectively by the two-dimensional CCD array from the back side of the wafer. Each collective measurement region in the wafer surface is scanned, thus obtaining mapping data related to the EL light in the entire region to be inspected in the wafer surface and specifying the positions of crystal defects in the wafer surface based on the data.;COPYRIGHT: (C)2008,JPO&INPIT