...
机译:CulnS_2 / ZnS纳米晶体的时间分辨光致发光性质:内在缺陷和外部杂质的影响
Centre for Energy Studies, Indian Institute of Technology Delhi, Hauz Khas, New Delhi 110016, India,Department of Physics, University of Arkansas, Fayetteville, Arkansas 72701, USA;
State Key Laboratory for Chemical Engineering, School of Chemical Engineering and Technology,Tianjin University, Tianjin 300 072, People's Republic of China,Ocean NanoTech, 2143 Worth Lane, Springdale, Arkansas 72764, USA,Department of Engineering Science and Mechanics, The Pennsylvania State University, University Park, Pennsylvania 16802, USA;
Ocean NanoTech, 2143 Worth Lane, Springdale, Arkansas 72764, USA;
Department of Engineering Science and Mechanics, The Pennsylvania State University, University Park, Pennsylvania 16802, USA;
Department of Physics, University of Arkansas, Fayetteville, Arkansas 72701, USA;
机译:具有ZnS封端和阳离子交换作用的CulnS_2三元和四元纳米晶体的时间分辨和温度依赖性光致发光
机译:本征点缺陷和锑杂质对单硫化锡电子结构和光电性能的影响
机译:杂质和固有缺陷对碳化硅单晶物理力学性能的影响
机译:杂质对碳化硅单晶物理机械性能的影响及其内在缺陷
机译:分子束外延生长掺杂杂质的ZnSe层的光致发光和电学性质
机译:模拟Zn1-xMnxSe / GaAs外延膜MnSe / ZnSe超晶格的远红外光谱并预测Zn1-xMnxSe中NP缺陷的杂质模式
机译:Znse:Cu / Znse / Zns核/壳纳米晶的无膦合成及光致发光性质