Avalanche Noise Generation Profile along Active Zone of Impact diodes

摘要

A generalised computer method to study the avalanche noise generation profile along the depletion layer of IMPATT diodes has been described. The method has been applied to different silicon flat profile SDR (single drift region) and DDR (double drift region) structures. The results o the analysis provide the intensity of noise generation at every space point in the active layer of the diode due to individual noise sources located at various space points.