Semiconductor avalanche transition time diode - has highly doped edge zones with divided centre zone of relatively low impurity concentrations

摘要

The production of a semiconductor device and an avalanche transition time diode consists of several zones with different concentrations of doped impurities. The process ensures a low rejection rate and doping characteristics which can be reproduced to a high degree of accuracy. The device will have a negative resistance at very high frequencies, and moreover, there will be no need to slice off epitaxial layers greater than 100 micron. The avalanche diode (1) consists of two highly doped edge zones (2,3) of opposite type conductivity. There is a base zone (6) in the middle which consists of two sectional zones (4,5) with a concentration of impurities which is low compared to the edge zones. The zones are produced by bombarding semiconductor crystal with neutrons.