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Fast On-Chip Inductance Extraction of VLSI Including Angled Interconnects

机译:包括角度互连的VLSI的快速片上电感提取

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A formula-based approach for extracting the inductance of on-chip VLSI interconnections is presented. All of the formulae have been previously proposed and are well-known, but the degrees of accuracy they provide in this context have not previously been examined. The accuracy of the equations for a 0.1 μm technology node is evaluated through comparison of their results with those of 3-D field solvers. Comprehensive evaluation has proven that the maximum relative error of self- and mutual inductances as calculated by the formulae are less than 5% for parallel wires and less than 13% for angled wires, when wire width is limited to no more than 10 times the minimum. When applied to a realistic example with 43 wire segments, a program using the formula-based approach extracts values more than 60 times faster than a 3-D field solver.
机译:提出了一种基于公式的方法来提取片上VLSI互连的电感。所有公式均已被提出并广为人知,但是在此情况下它们提供的准确度尚未得到检验。通过将其结果与3-D场求解器的结果进行比较,可以评估0.1μm技术节点的方程的准确性。综合评估证明,当线宽限制在最小最小值的10倍以内时,通过公式计算得出的自感和互感的最大相对误差对于平行线小于5%,对于倾斜线小于13%。 。当将其应用于具有43个线段的实际示例时,使用基于公式的方法的程序所提取的值将比3-D场求解器快60倍以上。

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