首页> 外国专利> High-frequency VLSI interconnect and intentional inductor impedance extraction in the presence of a multi-layer conductive substrate

High-frequency VLSI interconnect and intentional inductor impedance extraction in the presence of a multi-layer conductive substrate

机译:多层导电基板存在下的高频VLSI互连和故意的电感器阻抗提取

摘要

Embodiments of methods, apparatus, and systems for extracting impedance for a circuit design are disclosed herein. Some of the disclosed embodiments are computationally efficient and can accurately compute the frequency-dependent impedance of VLSI interconnects and/or intentional inductors in the presence of multi-layer conductive substrates. In certain embodiments, the resulting accuracy and CPU time reduction are a result of a Green's function approach with the correct quasi-static limit, a modified discrete complex image approximation to the Green's function, and a continuous dipole expansion to evaluate the magnetic vector potential at the distances relevant to VLSI interconnects and intentional inductors.
机译:本文公开了用于为电路设计提取阻抗的方法,装置和系统的实施例。在多层导电基板的存在下,一些公开的实施例在计算上是有效的,并且可以精确地计算VLSI互连和/或故意电感器的频率相关阻抗。在某些实施例中,所得到的精度和CPU时间的减少是具有正确的准静态极限的格林函数方法,格林函数经过修正的离散复杂图像近似值以及连续偶极子扩展以评估磁矢量势的结果。与VLSI互连和故意电感有关的距离。

著录项

  • 公开/公告号US9230054B2

    专利类型

  • 公开/公告日2016-01-05

    原文格式PDF

  • 申请/专利权人 MENTOR GRAPHICS CORPORATION;

    申请/专利号US201414563285

  • 发明设计人 ROBERTO SUAYA;

    申请日2014-12-08

  • 分类号G06F17/50;G06F11/22;

  • 国家 US

  • 入库时间 2022-08-21 14:27:50

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