Comparison between Device Simulators for Gate Current Calculation in Ultra-Thin Gate Oxide n-MOSFETs

摘要

The gate oxide of sub-0.1μm MOSFETs chan- nel length is expected to be reduced beyond 3nm in spite of an increasing direct tunneling gate current. As tunnel injection modeling into SiO_2 is expected to depend on the electron trans- port model adopted for the device description, a critical compar- ison is made in this paper between gate currents obtained from simulators based on Drift-Diffusion, Energy-Balance, and Monte Carlo models.