Continuous Wave Operation of InGaN Laser diodes Fabricated on SiC Substrates

摘要

We introduce the characteristics for continuous wave operation at room temperature of InGaN laser diodes fab- ricated on SiC substrates. The threshold durrent was 60mA, the threshold voltage was 8.3V, and the oscillation wavelength was 404.4nm. The lifetime of the laser diodes with a constant light output of 1mW at 25℃ was 57 hours. The heat dissipation of the devices mounted p-side-up on a stem without using a heat sink was shown to be as good as that of devices mounted p- side-down with an external heat sink, owing to the high thermal conductivity of SiC substrates.