Simulation of DGSOI MOSFETs with a Schroedinger-Poisson Based Mobility Model

摘要

A TCAD implementation of a quantum-mechanical mobility model in the commercial device simulator DESSIS_ISE is presented. The model makes use of an integrated 1D Schroedinger-Poisson solver. Effective mobilities μ_(eff) and transfer characteristics are calculated for DGSOI MOSFETs with a wide range of silicon film thickness t_(Si) and buried-oxide thickness t_(box). It is shown that the volume-inversion related enhancement of μ_(eff) for t_(Si) ≈ 10 nm is bound to symmetrical DGSOIs, whereas SIMOX based devices with thick buried oxides limit μ_(eff) to the bulk value. The still immature technology makes a conclusive comparison with experimental data impossible.