Ferroelectric Split-Gate-Field-Effect-Transistors for Nonvolatile Memory Cell Array

摘要

A novel ferroelectric-gate transistor with split-gate structure has been proposed and its read out characteristics have been analyzed. "Transistor-type" FeRAMs have a problem in degradation of readout current, i.e. when the readout voltage is applied at the gate, the current of readout operation is smaller than that of write operation. We demonstrate by SPICE simulation that the proposed split-gate structure ferroelectric-FET can overcome the problem.