Crossbar arrays of nonvolatile, rewritable polymer ferroelectric diode memories on plastic substrates

摘要

In this paper, we demonstrate a scalable and low-cost memory technology using a phase separated blend of a ferroelectric polymer and a semiconducting polymer as data storage medium on thin, flexible polyester foils of only 25 μm thickness. By sandwiching this polymer blend film between rows and columns of metal electrode lines where each intersection makes up one memory cell, we obtained 1 kbit cross bar arrays with bit densities of up to 10 kbit/cm~2.