A Fully Integrated CMOS RF Front-End with On-Chip VCO for W-CDMA Applications

摘要

A fully integrated RF front-end for W-CDMA applications including a low noise amplifier, a down conversion mixer, a digitally programmable gain amplifier, an on-chip VCO, and a fractional-N frequency synthesizer is designed using a 0.35-μm CMOS process. A multi-stage ring shaped on-chip LC-VCO exhibiting bandpass characteristics overcomes the limitation of low-Q components in the tank circuits and improves the phase noise performance. The measured phase noise of the on-chip VCO is -134dBc/Hz at 1 MHz offset. The receiver RF front-end achieves a NF of 3.5 dB, an IIP3 of-16 dBm, and a maximum gain of 80 dB. The receiver consumes 52 mA with a 3-V supply and occupies only 2 mm~2 die area with minimal external components.