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首页> 外文期刊>IEEE Journal of Solid-State Circuits >A 1.2-V RF Front-End With On-Chip VCO for PCS 1900 Direct Conversion Receiver in 0.13-μm CMOS
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A 1.2-V RF Front-End With On-Chip VCO for PCS 1900 Direct Conversion Receiver in 0.13-μm CMOS

机译:具有片上VCO的1.2V RF前端,用于0.13μmCMOS的PCS 1900直接转换接收器

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In this paper, a 1.2-V RF front-end realized for the personal communications services (PCS) direct conversion receiver is presented. The RF front-end comprises a low-noise amplifier (LNA), quadrature mixers, and active RC low-pass filters with gain control. Quadrature local oscillator (LO) signals are generated on chip by a double-frequency voltage-controlled oscillator (VCO) and frequency divider. A current-mode interface between the downconversion mixer output and analog baseband input together with a dynamic matching technique simultaneously improves the mixer linearity, allows the reduction of flicker noise due to the mixer switches, and minimizes the noise contribution of the analog baseband. The dynamic matching technique is employed to suppress the flicker noise of the common-mode feedback (CMFB) circuit utilized at the mixer output, which otherwise would dominate the low-frequency noise of the mixer. Various low-voltage circuit techniques are employed to enhance both the mixer second- and third-order linearity, and to lower the flicker noise. The RF front-end is fabricated in a 0.13-μm CMOS process utilizing only standard process options. The RF front-end achieves a voltage gain of 50 dB, noise figure of 3.9 dB when integrated from 100 Hz to 135 kHz, IIP3 of -9 dBm, and at least IIP2 of +30 dBm without calibration. The 4-GHz VCO meets the PCS 1900 phase noise specifications and has a phase noise of -132 dBc/Hz at 3-MHz offset.
机译:本文介绍了一种用于个人通信服务(PCS)直接转换接收器的1.2V RF前端。射频前端包括一个低噪声放大器(LNA),正交混频器和带有增益控制的有源RC低通滤波器。正交本地振荡器(LO)信号由双频压控振荡器(VCO)和分频器在芯片上生成。下变频混频器输出和模拟基带输入之间的电流模式接口以及动态匹配技术可同时改善混频器线性度,减少混频器开关引起的闪烁噪声,并使模拟基带的噪声影响最小。采用动态匹配技术来抑制混频器输出端使用的共模反馈(CMFB)电路的闪烁噪声,否则该噪声将主导混频器的低频噪声。采用了各种低压电路技术来增强混频器的二阶和三阶线性度,并降低闪烁噪声。 RF前端仅使用标准工艺选项以0.13μmCMOS工艺制造。从100 Hz至135 kHz积分时,RF前端可实现50 dB的电压增益,3.9 dB的噪声系数,-9 dBm的IIP3和+30 dBm的至少IIP2,无需校准。 4 GHz VCO满足PCS 1900相位噪声规范,在3 MHz偏移时具有-132 dBc / Hz的相位噪声。

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