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A Precision CMOS Power-On-Reset Circuit with Power Noise Immunity for Low-Voltage Technology

机译:一种用于低电压技术的具有电源噪声抑制功能的精密CMOS上电复位电路

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摘要

In this era of System-On-a-Chip (SOC) technology, a des-ignable initial state is required. Thus, embedding low voltage and low power Power-On-Reset (POR) circuit on the SOC chip is important for the portable device. This paper proposes a new POR circuit with process and temperature compensations. A band-gap reference is used in this circuit to reduce the effect of the temperature and process variations. With 200 mV hysteretic design provides robust noise immunity against voltage fluctuations on the power supply. The POR circuit has been designed, simulated, and implemented. A test chip has been fabricated by using 0.18μm single-poly triple-metal CMOS logical process. Measurement results show the rise threshold voltage V_(rr) has only a 3% variation under the temperature range from -40℃ to 125℃. The power consumption is 39 mW at the 1.8V power supply. The chip size of the POR is 62mm x 280mm. Thus, this POR circuit has a great potential to apply to a low power supply system.
机译:在当今的片上系统(SOC)技术时代,需要一种可设计的初始状态。因此,对于便携式设备而言,在SOC芯片上嵌入低电压和低功耗上电复位(POR)电路很重要。本文提出了一种具有过程和温度补偿的新型POR电路。在该电路中使用带隙基准来减小温度和工艺变化的影响。滞回设计采用200 mV,可提供强大的抗噪声能力,可抵抗电源电压波动。 POR电路已被设计,仿真和实现。测试芯片采用0.18μm的单晶三金属CMOS逻辑工艺制成。测量结果表明,在-40℃至125℃的温度范围内,上升阈值电压V_(rr)仅变化3%。在1.8V电源下的功耗为39 mW。 POR的芯片尺寸为62mm x 280mm。因此,该POR电路具有应用于低电源系统的巨大潜力。

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