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Wavelength Switching Using GalnAs/InP MQW Variable Refractive-Index Arrayed Waveguides by Thermo-Optic Effect

机译:使用GalnAs / InP MQW可变折射率阵列波导通过热光效应进行波长切换

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We have successfully demonstrated a GalnAs/InP multiple quantum well (MQW)-based wavelength switch composed of the straight arrayed waveguide with linearly varying refractive index distribution by changing the refractive index using thermo-optic effect. Since optical path length differences between waveguides in the array were achieved through refractive index differences that were controlled by SiO_2 mask design in selective metal-organic vapor phase epitaxy (MOVPE), wavelength demultiplexing, and the output port switching in each wavelength of light by the refractive index change in the array waveguides through the thermo-optic etfect were achieved. We have obtained the wavelength switching and the change of transmission spectra in each output ports. arrayed waveguide; GalnAs/InP; multiple quantum well (MQW); wavelength switch; wavelength demultiplexer; selective
机译:我们已经成功地演示了基于GalnAs / InP多量子阱(MQW)的波长开关,该开关由具有线性变化的折射率分布的直线阵列波导组成,该线性开关通过使用热光效应改变折射率来实现。由于阵列中各波导之间的光程长度差异是通过在选择性金属有机气相外延(MOVPE),SiO2掩模设计,波长解复用和输出端口在光的每个波长下切换的折射率差异实现的通过热光效应在阵列波导中实现了折射率变化。我们已经获得了每个输出端口的波长切换和透射光谱的变化。阵列波导GalnAs / InP;多量子阱(MQW);波长开关;波长解复用器;可选择的

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