机译:使用InN的高性能1.55μm量子点异质结构激光器的建议
Dept. of Electrical & Electronic Engineering, Khulna University of Engineering and Technology (KUET), Khulna-9203, Bangladesh;
Dept. of Electrical & Electronic Engineering, Khulna University of Engineering and Technology (KUET), Khulna-9203, Bangladesh;
Dept. of Electrical & Electronic Engineering, Khulna University of Engineering and Technology (KUET), Khulna-9203, Bangladesh;
Dept. of Electrical & Electronic Engineering, Khulna University of Engineering and Technology (KUET), Khulna-9203, Bangladesh,Graduate School of Engineering, University of Fukui, Fukui-shi, 910-8507 Japan;
Graduate School of Engineering, University of Fukui, Fukui-shi, 910-8507 Japan;
Graduate School of Engineering, University of Fukui, Fukui-shi, 910-8507 Japan;
quantum dot; InN; laser; modal gain; efficiency; size fluctuation;
机译:高性能InAs / $ {rm In} _ {0.53} {rm Ga} _ {0.23} {rm Al} _ {0.24} {rm As} $ / InP量子点1.55 $ mu {rm m} $隧道注入激光器
机译:1.55μmInAs / GaAs量子点和高重复率量子点SESAM锁模激光器
机译:InP衬底上InAs量子点的生长和光学特性:朝向1.55μm量子点激光器
机译:1.55μm激光使用Inn基量子阱异质结构
机译:铝砷化镓-砷化镓-砷化镓-砷化铟量子点通过低压金属有机化学气相沉积与量子阱异质结构激光器耦合。
机译:1.55 µm InAs / GaAs量子点和高重复率量子点SESAM锁模激光器
机译:1.55μmInGaAlAs量子阱掩埋异质结构激光器的热性能
机译:si上的超高速电子注入1.55微米量子点微管和纳米线激光器。