Ultrahigh-Speed Electrically Injected 1.55 micrometer Quantum Dot Microtube and Nanowire Lasers on Si.

摘要

In this report, we describe the progress made in rolled-up InP-based tube lasers and in the growth and characterization of III-nitride nanowire structures on Si. We report on the demonstration of electrically injected rolled-up InP-based tube lasers, which exhibit a threshold current ~ 1.05 mA. We also describe the achievements of electrically injected AlGaN nanowire lasers that can operate in the UV-AII (315-340 nm), UV-B (280-315nm), and UV-C (200-280 nm).