Evaluation of Chemical Composition and Bonding Features of Pt/SiO_x/Pt MIM Diodes and Its Impact on Resistance Switching Behavior

摘要

We have investigated the impact of O_2 annealing after SiO_x deposition on the switching behavior to gain a better understanding of the resistance switching mechanism, especially the role of oxygen deficiency in the SiO_x network. Although resistive random access memories (ReRAMs) with SiO_x after 300℃ annealing sandwiched with Pt electrodes showed uni-polar type resistance switching characteristics, the switching behaviors were barely detectable for the samples after annealing at temperatures over 500℃. Taking into account of the average oxygen content in the SiO_x films evaluated by XPS measurements, oxygen vacancies in SiO_x play an important role in resistance switching. Also, the results of conductive AFM measurements suggest that the formation and disruption of a conducting filament path are mainly responsible for the resistance switching behavior of SiO_x.