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Charge Injection Path of Bottom-Contact Organic Thin-Film Transistors

机译:底部接触有机薄膜晶体管的电荷注入路径

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摘要

To investigate the charge injection path on the source/drain electrode of bottom-contact organic thin-film transistors (OTFTs), OTFTs with different source/drain metal combinations using Al as a blocking layer are fabricated. By comparing transfer characteristics of devices, it is shown that the side of the source/drain electrode is primary charge injection path of conventional bottom-contact OTFTs. However, it is shown that for the devices with thin source/drain electrodes, also the top injection has an important role in charge injection process.
机译:为了研究底部接触有机薄膜晶体管(OTFT)的源/漏电极上的电荷注入路径,制造了使用Al作为阻挡层的具有不同源/漏金属组合的OTFT。通过比较器件的传输特性,可以看出源/漏电极的侧面是常规底接触OTFT的主要电荷注入路径。然而,已表明对于具有薄的源极/漏极的器件,顶部注入在电荷注入过程中也起着重要作用。

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  • 来源
    《電子情報通信学会技術研究報告》 |2008年第122期|p.125-128|共4页
  • 作者单位

    Inter-University Semiconductor Research Center (ISRC) and School of Electrical Engineering, Seoul National University, San 56-1, Shinlim-dong, Kwanak-gu, Seoul, 151-742, KOREA;

    Inter-University Semiconductor Research Center (ISRC) and School of Electrical Engineering, Seoul National University, San 56-1, Shinlim-dong, Kwanak-gu, Seoul, 151-742, KOREA;

    Inter-University Semiconductor Research Center (ISRC) and School of Electrical Engineering, Seoul National University, San 56-1, Shinlim-dong, Kwanak-gu, Seoul, 151-742, KOREA;

    Inter-University Semiconductor Research Center (ISRC) and School of Electrical Engineering, Seoul National University, San 56-1, Shinlim-dong, Kwanak-gu, Seoul, 151-742, KOREA;

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  • 入库时间 2022-08-18 00:37:29

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