机译:底部接触有机薄膜晶体管的电荷注入路径
Inter-University Semiconductor Research Center (ISRC) and School of Electrical Engineering, Seoul National University, San 56-1, Shinlim-dong, Kwanak-gu, Seoul, 151-742, KOREA;
Inter-University Semiconductor Research Center (ISRC) and School of Electrical Engineering, Seoul National University, San 56-1, Shinlim-dong, Kwanak-gu, Seoul, 151-742, KOREA;
Inter-University Semiconductor Research Center (ISRC) and School of Electrical Engineering, Seoul National University, San 56-1, Shinlim-dong, Kwanak-gu, Seoul, 151-742, KOREA;
Inter-University Semiconductor Research Center (ISRC) and School of Electrical Engineering, Seoul National University, San 56-1, Shinlim-dong, Kwanak-gu, Seoul, 151-742, KOREA;
机译:底部接触有机薄膜晶体管的电荷注入路径
机译:底部接触有机薄膜晶体管的电荷注入路径
机译:底部接触有机薄膜晶体管的电荷注入路径
机译:用于底部接触并五苯有机薄膜晶体管的金电极上氧等离子体处理增强的空穴注入
机译:苯胺基有机半导体的电荷注入,传输和薄膜晶体管应用。
机译:氮化硼上单层有机薄膜晶体管中的超高迁移率和高效电荷注入
机译:通过改善横向触点,高性能底部接触有机薄膜晶体管