Enhanced hole injection by oxygen plasma treatment on Au electrodefor bottom-contact pentacene organic thin-film transistors

摘要

Thin AuOx layer was formed by O2 plasmarntreatment on Au electrode. The surface work functionrnof plasma treatment showed higher by 0.5 eV thanrnthat of bare Au, reducing the hole injection barrier atrnthe Au/pentacene interface. Using O2 plasma-treatedrnAu source-drain electrodes, the field-effect mobility ofrnbottom-contact pentacene-OTFT was increased fromrn0.05 to 0.1 cm2/Vs.