MOSFETコンパクトモデルと今後の展開: バルクMOSFETからマルチゲートMOSFETに向けて

摘要

Scaling down of MOSFETs is getting more difficult as technology proceeds forward. A possible approach to facilitate the scaling is to use the third dimension, so that the multi-gate MOSFET structure using this approach is becoming attractive. This direction of the device technology must be timely followed by the circuit-simulation-model development to assure that the circuit is possible even before the fabrication technology becomes mature. In this paper the importance to develop circuit-simulation models based on device physics is addressed, in particular for the purpose of multi-gate MOSFETs. The HiSIM-model, which is applicable from bulk MOSFETs to multi-gate MOSFETs, is explained as an example fulfilling these requirements.%MOSFETの微細化に限りが見え始めた時に，MOSFETの不要な部分を捨てることによって高集積化を実現する方向に開発の梶がきられはじめた．すなわちMOSFETはバルクからマルチゲートへと進化を遂げようとしている，回路モデルとしてこの開発に責献し続けるために，デバイスの基本原理に基づいてモデルを開発することの重要性を述べる．また実際にバルクMOSFETからマルチゲートMOSFETを包括するモデルについて，HiSIMを例に解説する．