Architecture and verification of the row chain cell array for polymer random access memory

摘要

A polymer memory, that is considered as one of the next-generation nonvolatile memories, has various excellent electrical and mechanical properties such as small cell feature sizes, high density integrations, and mass-producibility. Although the polymer memories have important advantages for reliability, the peripheral circuits of the polymer memories have not been studied yet, thereby not many research articles available. In this paper, we analyzed and simulate the row chain cell array structure as cross-point cell scheme and demonstrated its ability to correctly read data and reduce noise between cells. Also we using the CMOS 0.35um process, we verified and simulated with test result for the row chain cell array.