Effect of Ion-Beam-Induced Damage on Luminescence Properties in Tb-Implanted Al_xGa_(1-x)N

摘要

We investigated the effect of ion-beam-induced damage on luminescence properties for rare earth ions -doped III-nitride semiconductor. Tb ions were implanted into Al_(0.35)Ga_(0.65)N epi-layers grown by OMVPE, and the dose were in the range of 1×10~(12) ~ 2.8×10~(16) Tb/cm~2. RBS/C reveals that ion-beam-induced damage level steeply increases when the dose exceed 5×10~(14) Tb/cm~2. Tb-related luminescence properties are much susceptible to defect, because CL intensity begins to saturate even at low dose (1×10~(13) Tb/cm~2) at which expected defect density is very low. Transient decay time became faster as increases Tb ions dose above 1×10~(13) Tb/cm~2. The results suggest that non-radiative defects, perhaps Tb-defect complexes, are formed in low dose condition even though the structural defect density is very low.