Electrical characteristics of OFETs with thin gate dielectric

摘要

In order to realize low voltage operation of pentacene-based field-effect-transistors (FETs), we have fabricated pantacene-based metal-oxide-semiconductor (MOS) diodes and FETs with thin SiO_2 gate dielectric, such as 3-10 nm. Excellent capacitance-voltage (C-V) characteristics of pentacene-based MOS diodes were observed with small hysteresis width even though the gate dielectric thickness was very thin, such as 3 nm. It also showed high mobility as 0.3 cm~2/Vs and low operation voltage in the pentacene FETs.