Growth of Homogeneous InGaSb Ternary Bulk Crystal and the Observation of Composition Profile in the Solution by X-Ray Penetration Method

摘要

We introduce a growth technique to grow homogeneous In_xGa_(1-x)Sb ternary bulk crystal and a method to measure the composition profiles in the InGaSb solution. In_xGa_(1-x)Sb bulk crystal was grown on a GaSb seed under a constant temperature gradient using a GaSb(seed)/InSb/GaSb(feed) sandwich sample. During growth, heat pulse technique was applied to estimate the growth rate. Homogeneous In_(0.03)Ga_(0.97)Sb crystal was grown by cooling the sample at an optimized value estimated by the temperature gradient and the growth rate. It was also demonstrated that the X-ray penetration method was a good method to measure the composition profiles in the solution.