360W出力と65％電力付加効率を有するL帯パーシャル整合GaN FET

摘要

In this paper, a high power and high efficiency partially-impedance matched GaN FET operating at L-band is presented. Recently, many over 100W output power GaN HEMT amplifiers have been developed. Especially, much attention is paid for Class-E GaN HEMT amplifiers, which will be used in mobile communication infrastructure systems. In general, class-E operation mode is used for such amplifiers for its simplicity. However there is a principle limitation of operation frequency or output power for class-E operation. In this paper a new class of amplifier is developed to overcome the limitation. By realizing intermediate operation mode between class-E and class-F, 360W output power and 65% power added efficiency was successfully obtained.%GaNHEMTはGaAsの10倍以上の出力電力密度が得られることから100W超出力のマイクロ波帯高出力増幅器として盛んに研究・開発が進められている．特に近年では基地局用増幅器への応用を目指したE級動作増幅器に注目が集まっている．E級増幅器は比較的容易に高効率動作を実現しやすいメリットがある反面，原理的に動作周波数あるいは出力電力に限界がある．本報告ではE級動作とF級動作の中間の動作級を実現することによりE級動作の限界を超えた動作周波数・出力電力を実現した．L帯パーシャル整合GaNFETの試作を行い，出力電力360W，電力付加効率65％の高出力・高効率を得た．