1．3μm帯25/40Gb/s EA変調器集積DFB－LD

摘要

We developed 1.3um 25/40Gb/s EMLs with tensile strained asymmetric QWs which showed superior response and modulation characteristic. Good characteristics of chip OMA (6.8dBm), extinction ratio (8.3dB) and ethernet mask margin (50%) were obtained at 25.8Gb/s. Also, clear eye-opening at 10km transmission was also achieved. In addition, excellent characteristics of chip power (5.0dBm), extinction ratio (9.2dB), SONET mask margin (13%) and 40km transmission penalty (-0.5dB) were obtained at 43.0Gb/s. From these results, our device is expected to be used in 100Gb/s ethernet and 40Gb/s-10/40km transmissions.%引張り歪非対称量子井戸を持つ1.3μm帯25/40Gb/s EA変調器集耕LDを実現し、優れた帯域と変調特性を得た。25.8Gb/sでチップ端OMA6.8dBm、消光比8.3dB、Ethemetマスクマージン50%の良好な特性が得られ、10km伝送後も明瞭なアイ開口を確認した。また、43.0Gb/sでもチップ端出力5.0dBtzl、消光比9.2dB、SONETマスクマージン13%、40km伝送ペナルティー0.5dBの良好な特性が得られ、100Gイーサネット及び4咲沌/s-10/40km用途に有望であることが示された。