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光変調器

机译:光调制器

摘要

To provide a light modulator of a low VπL in a state that a characteristic impedance Zc of a traveling wave electrode is maintained at a predetermined value using a lithium niobate film formed on a substrate.SOLUTION: A light modulator includes: a substrate 4; a lithium niobate film 5 having a ridge shape part 6 formed on a main surface of a substrate 4; a buffer layer 7 formed on the ridge shape part 6; first electrodes 2a, 2b formed in contact with an upper surface of the buffer layer 7; a dielectric layer 8 arranged in contact with the upper surface of the buffer layer 7; and at least second electrodes 3a, 3b, and 3c arranged so as to be spaced apart from the first electrodes 2a, 2b. The first electrodes 2a, 2b consist of an upper side portion having a side surface not in contact with a dielectric layer 8 and a lower side portion having the side surface in contact with the dielectric layer 8. At least one portion of the upper surface of the dielectric layer 8 is in contact with the first electrodes 2a, 2b, and a width of the lower side portion of the first electrodes 2a, 2b is narrower than the upper side portion of the first electrodes 2a, 2b.SELECTED DRAWING: Figure 13
机译:为了提供一种低VπL的光调制器,该光调制器使用形成在基板上的铌酸锂膜将行波电极的特征阻抗Zc保持在预定值。铌酸锂膜5具有在基板4的主面上形成的棱线状的部分6。在脊状部6上形成缓冲层7。第一电极2a,2b形成​​为与缓冲层7的上表面接触;与缓冲层7的上表面接触设置的介电层8;至少第二电极3a,3b和3c布置成与第一电极2a,2b间隔开。第一电极2a,2b由具有不与电介质层8接触的侧面的上侧部分和具有与电介质层8接触的侧面的下侧部分组成。介电层8与第一电极2a,2b接触,并且第一电极2a,2b的下侧部分的宽度比第一电极2a,2b的上侧部分窄。图13

著录项

  • 公开/公告号JP2019045880A

    专利类型

  • 公开/公告日2019-03-22

    原文格式PDF

  • 申请/专利权人 TDK CORP;

    申请/专利号JP20180237085

  • 申请日2018-12-19

  • 分类号G02F1/035;

  • 国家 JP

  • 入库时间 2022-08-21 12:23:54

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