量子補正モンテカルロ法による歪みInSb HEMTの遅延時間解析

摘要

InSbの歪みバンド構造を計算し,量子補正モンテカルロ法を用いてInSb HEMTの特性を解析した.またInAs HEMTと比較した.チャネルに加わる圧縮歪みはInSbチャネルの電子の有効質量を増加させたが,InSb HEMTはInAs HEMTと比べて低いドレイン電圧V_(ds)から高い電流駆動能力と高いf_Tを示した.一方圧縮歪みは衝突電離スレツショルドエネルギーE_(th)を上昇させたが,低いV_(ds)から衝突電離が発生した.これによりInSb HEMTは電流駆動能力とf_Tが高いが,低いV_(ds)での使用に制限されることを示した.%The strained band structures of InSb are calculated, and then the intrinsic performances of the InSb HEMTs are analyzed by using the quantum-corrected MC simulation. These are also compared with the InAs HEMT. Although the compressive strain applied to the channel increases the electron effective mass, m~* the InSb HEMTs still show the higher current drivability and the higher intrinsic f_T than the InAs HEMT. However, the severe impact ionization occurs from the lower V_(ds) owing to the smaller impact ionization threshold energy,E_(th), even though it is increased by the compressive strain. This restricts the InSb HEMTs within the low V_(ds) applications.