Preparation of Bi Layer Structured Ferroelectric Thin Film by Laser Ablation -℃SrBi_2Ta_2O_9 and Bi_4Ti_3O_12 Thin Films-

摘要

Bismuth layer-structured ferroelectric SrBi_2Ta_2O_9 and Bi_4Ti_3O_12 thin films have been prepared on Pt and Si at low tem- perature of 400-550℃ by laser ablation method using an ArF excimer laser. Crystallographic properties of these films deposited at various substrate temperatures, laser frequencies and oxygen gas pressures are characterized. Depth profile of X- ray photoelectron spectra reveales a homogeneous composition but Bi oxidation is not satisfactory.