Preparation of Transparent Conducting ZnO Thin Films Prepared by Laser Ablation Method Using Split Target

摘要

Thin films of ZnO doped with Al_2O_3, Ga_2O_3, In_2O_3, SnO_2, ITO, Ag_2O and CuO have been deposited on glass substrates by a pulsed laser deposition technique using an ArF laser (λ=193nm). The lowest resistivity was obtained for films deposited from the target with 2wt/100 Al_2O_3 (AZO (2 wt/100)); the resistivity of 1.43 x 10~-4Ω.cm was obtained at a substrate temperature of 300℃. On the other hand, there were minute irregularities on the surfaces of ZnO films doped with 4-7 wt/100 Ga_2O_3(GZO (4-7wt/100)).