4H-SiC pinダイオードの順方向電圧劣化特性と高耐圧少劣化（000-1）C面4H-SiC pinダイオード

摘要

The dependence of forward voltage degradation on crystal faces for 4H-SiC pin diodes has been investigated. The forward voltage degradation has been reduced by fabricating the diodes on the (000-1) C-face off-angled toward (11-20). High-voltage 4H-SiC pin diodes on the (000-1) C-face with small forward voltage degradation have also been fabricated successfully. A high breakdown voltage of 4.6 kV and △V_F of 0.04 V were achieved for a (000-1) C-face pin diode. A 8.3 kV blocking performance, which is the highest voltage in the use of (000-1) C-face, is also demonstrated in 4H-SiC pin diode.%pinダイオードやバイポーラトランジスタ，GTO，GCTrnなどのバイポーラ半導体素子は，ショットキーダイオードrnやMOSFETなどのユニポーラ半導体素子に比べてビルトrnイン電圧が高いが，少数キャリアの注入によるドリフト層rnの伝導度変調により抵抗が大幅に小さくなる。したがって，rn電力用途などの高電圧大電流領域では，損失を小さくできrnるため，バイポーラ半導体素子が用いられている。