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Multistage chemical etching for high-precision frequency adjustment in ultrahigh-frequency fundamental quartz resonators

机译:用于超高频基本石英谐振器的高精度频率调整的多级化学蚀刻

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摘要

Chemical etching to precisely adjust and to make uniform the thicknesses of vibrating areas of multiple resonators in a single wafer was applied to inverted-mesa quartz resonators exciting an ultrahigh-frequency fundamental thickness vibration. The process consisted of five stages, combining high-rate etching for high productivity and low-rate etching for high-precision adjustment. By using this process, the resonance frequencies of 41 resonators in the single wafer were adjusted to 620 /spl plusmn/ 1.5 MHz, which corresponds to vibrating area thicknesses of 2.2 /spl mu/m /spl plusmn/ 6 nm. In the temperature-frequency characteristics of these resonators in the single wafer, the difference between the maximum first-order temperature coefficient and the minimum first-order temperature coefficient was equivalent to a cut angle change of two arcminutes. In addition, vibrating areas with an arithmetic mean surface roughness of 0.17 nm on the concave side were produced by this multistage etching.
机译:为了精确调整和使单个晶片中多个谐振器的振动区域的厚度均匀而进行的化学蚀刻被应用于激发超高频基本厚度振动的倒置台面石英谐振器。该过程包括五个阶段,将高速率蚀刻和高速率蚀刻相结合以实现高生产率,而低速率蚀刻则可以进行高精度调整。通过使用该过程,将单个晶片中的41个谐振器的谐振频率调整为620 / spl plusmn / 1.5 MHz,这对应于2.2 / spl mu / m / spl plusmn / 6 nm的振动区域厚度。在单个晶片中的这些谐振器的温度-频率特性中,最大一阶温度系数和最小一阶温度系数之间的差等于两个弧分的切割角变化。另外,通过该多阶段蚀刻,在凹面侧产生算术平均表面粗糙度为0.17nm的振动区域。

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