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首页> 外文期刊>IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control >Reduced transposed flicker noise in microwave oscillators using GaAs-based feedforward amplifiers
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Reduced transposed flicker noise in microwave oscillators using GaAs-based feedforward amplifiers

机译:使用基于GaAs的前馈放大器降低微波振荡器中的转置闪烁噪声

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Transposed flicker noise reduction and removal is demonstrated in 7.6 GHz microwave oscillators for offsets greater than 10 kHz. This is achieved by using a GaAs-based feedforward power amplifier as the oscillation-sustaining stage and incorporating a limiter arid resonator elsewhere in the loop. 20 dB noise suppression is demonstrated at 12.5 kHz offset when the error correcting amplifier is switched on. Three oscillator pairs have been built. A transmission line feedback oscillator with a Qo of 180 and two sapphire-based, dielectric resonator oscillators (DROs) with a Qo of 44,500. The difference between the two DROs is a change in the limiter threshold power level of 10 dB. The phase noise rolls-off at (I/f)2 for offsets greater than 10 kHz for the transmission line oscillator and is set by the thermal noise to within 0-1 dB of the theoretical minimum. The noise performance of the DROs is within 6-12 dB of the theory. Possible reasons for this discrepancy are presented.
机译:在7.6 GHz微波振荡器中证明了转置闪烁噪声的减少和消除,其偏移大于10 kHz。这可以通过使用基于GaAs的前馈功率放大器作为振荡维持级,并在环路的其他位置并入一个限幅器和谐振器来实现。当纠错放大器打开时,在12.5 kHz偏移下演示了20 dB噪声抑制。已经建立了三个振荡器对。具有Qo为180的传输线反馈振荡器和两个基于Qo为44,500的基于蓝宝石的介电谐振器振荡器(DRO)。两个DRO之间的差异是限制器阈值功率电平发生了10 dB的变化。对于传输线振荡器,对于大于10 kHz的偏移,相位噪声会在(I / f)2处滚降,并由热噪声设置为理论最小值的0-1 dB之内。 DRO的噪声性能在理论值的6-12 dB之内。提出了这种差异的可能原因。

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