The integration of simulation and response surface methodology for the optimization of IC processes

摘要

This paper describes a methodology that can be used for the optimization of semiconductor processes. This is achieved by integrating the design of experiments and Response Surface Methodology (RSM) with process and device simulation tools. Software for automating multiple simulations has been implemented and interfaced to RS/1 to assist in the manual design and analysis of experiments and the subsequent optimization procedures. The procedure is illustrated through the optimization of part of an MOS process with multi-parameter optimization being performed by the introduction of composite responses and sensitivity analysis. These simulated results are also compared with experimental measurements.